[1]张文通,高晓红*.退火气氛对ZnO薄膜晶体管电学稳定性的影响[J].吉林建筑大学学报,2019,(05):81-86.
 ZHANG Wen-tong,GAO Xiao-hong*.Effect of rapid annealing gas atmosphere on hysteretic stability of ZnO thin film transistors[J].Journal of Jilin Jianzhu University,2019,(05):81-86.
点击复制

退火气氛对ZnO薄膜晶体管电学稳定性的影响(/HTML)
分享到:

《吉林建筑大学学报》[ISSN:2095-8919/CN:22-1413/TU]

卷:
期数:
2019年05期
页码:
81-86
栏目:
信息科技
出版日期:
2019-10-25

文章信息/Info

Title:
Effect of rapid annealing gas atmosphere on hysteretic stability of ZnO thin film transistors
文章编号:
2095-8919(2019)05-0081-06
作者:
张文通高晓红*
吉林建筑大学 电气与计算机学院,长春 130118
Author(s):
ZHANG Wen-tongGAO Xiao-hong*
ZHANG Wen-tong,GAO Xiao-hong*School of electrical and computer Engineering,Jilin Jianzhu university,Changchun 130118,China
关键词:
ZnO薄膜晶体管滞回稳定性退火
Keywords:
ZnO thin film transistorshysteretic stabilityannealing
分类号:
TB 383
文献标志码:
A
摘要:
在低温条件下(90 ℃)使用射频磁控溅射在表面长有100 nm厚的氧化硅绝缘层的硅衬底上沉积ZnO薄膜,并制备成薄膜晶体管器件,然后放入不同气氛下进行退火.研究不同的退火气氛对ZnO薄膜晶体管(TFT)的电学性能的影响,并对ZnO薄膜进行了X射线衍射(XRD)测试和光致发光(PL)测试,使用场发射扫描电子显微镜(SEM)和原子力显微镜(AFM)观察ZnO薄膜的表面形貌.实验结果表明,不同的退火气氛对ZnO薄膜晶体管的性能有着显著的影响,在N2氛围下进行退火的器件性能最优,电流开关比达到了5.88×107,滞回稳定性ΔVTH仅为0.2 V,界面态密度DIT为3.34×1012cm-2eV-1.
Abstract:
ZnO thin films were deposited on silicon substrate by radio frequency magnetron sputtering at low temperature(90 ℃).Thin film transistors were fabricated,and then annealed in different atmospheres.The effects of different rapid annealing atmosphere on the electrical properties of ZnO thin film transistors were studied.X-ray diffraction(XRD)and photoluminescence(PL)measurements were carried out on ZnO thin films.The surface morphology of ZnO thin films was observed by field emission scanning electron microscopy(SEM)and atomic force microscopy(AFM).The experimental results show that different rapid annealing atmosphere has significant influence on the performance of ZnO thin film transistors.The device annealed in N2 atmosphere has the best performance.The Ion/Ioff is 5.88×107,and the hysteretic stability ΔVTH is only 0.2V.The density of interface state DIT is 3.34×1012cm-2eV-1.

参考文献/References:

[1] Baek IH,Pyeon JJ,Han SH,et al.High-Performance Thin Film Transistors of Quaternary Indium-Zinc-Tin Oxide Films Grown by Atomic Layer Deposition[J].ACS Applied Materials & Interfaces, 2019. [2] Mullapudi GSR,Velazquez-Nevarez GA,Avila-Avendano C,et al.Low-Temperature Deposition of Inorganic-Organic HfO2-PMMA Hybrid Gate Dielectric Layers for High Mobility ZnO Thin-film Transistors[J].ACS Applied Electronic Materials,2019. [3] Kim WS,Moon YK,Kim KT,et al.Improvement in the negative bias temperature stability of ZnO based thin film transistors by Hf and Sn doping[J].Thin Solid Films,2011,519(20):6849-6852. [4] Seo SJ,Choi CG,Hwang YH,et al.High performance solution-processed amorphous zinc tin oxide thin film transistor[J].Journal of Physics D Applied Physics,2009,42(3):35105-35106. [5] Ye Z,Yuan Y,Xu H,et al.Mechanism and Origin of Hysteresis in Oxide Thin-Film Transistor and Its Application on 3-D Nonvolatile Memory[J].IEEE Transactions on Electron Devices,2017,64(2):438-446. [6] Huang HY,Wang SJ,Wu CH,et al.Improvement of electrical performance of InGaZnO/HfSiO TFTs with 248-nm excimer laser annealing[J].Electronic Materials Letters,2014,10(5):899-902. [7] Fuh CS,Liu PT,Teng LF,et al.Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application[J].IEEE Electron Device Letters,2013,34(9):1157-1159. [8] Hung CH,Wang SJ,Liu PY,et al.A room temperature process for the fabrication of amorphous indium gallium zinc oxide thin-film transistors with co-sputtered Zr x Si1xO2 Gate dielectric and improved electrical and hysteresis performance[J].Japanese Journal of Applied Physics,2017,56(4S):04CG06. [9] Liang H.Study on the Properties of ZnO-TFT Prepared by Magnetron Sputtering[C]Solid State Phenomena.Trans Tech Publications,2018,278:48-53. [10] Muñoz-Fernandez L,Sierra-Fernández A,Miloevi O,et al.Solvothermal synthesis of Ag/ZnO and Pt/ZnO nanocomposites and comparison of their photocatalytic behaviors on dyes degradation[J].Advanced Powder Technology,2016,27(3):983-993.

备注/Memo

备注/Memo:
收稿日期:2019-09-17
作者简介:张文通(1993~),男,吉林省长春市人,硕士研究生.

更新日期/Last Update: 2019-10-25