[1]陆 璐,杨小天*,沈兆伟,等.基于喷墨打印的圆形电极结构薄膜晶体管制备与研究[J].吉林建筑大学学报,2019,(05):76-80.
 LU Lu,YANG Xiao-tian*,SHEN Zhao-wei,et al.Preparation and research of circular electrode structure thin film transistor based on inkjet printing[J].Journal of Jilin Jianzhu University,2019,(05):76-80.
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基于喷墨打印的圆形电极结构薄膜晶体管制备与研究(/HTML)
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《吉林建筑大学学报》[ISSN:2095-8919/CN:22-1413/TU]

卷:
期数:
2019年05期
页码:
76-80
栏目:
信息科技
出版日期:
2019-10-25

文章信息/Info

Title:
Preparation and research of circular electrode structure thin film transistor based on inkjet printing
文章编号:
2095-8919(2019)05-0076-05
作者:
陆 璐杨小天*沈兆伟周 路王 超
吉林建筑大学 电气与计算机学院,长春 130118
Author(s):
LU LuYANG Xiao-tian*SHEN Zhao-weiZHOU LuWANG Chao
LU Lu,YANG Xiao-tian*,SHEN Zhao-wei,ZHOU Lu,WANG ChaoSchool of electrical and computer engineering,Jilin Jianzhu university,Changchun 130118,China
关键词:
薄膜晶体管(TFT)喷墨打印圆形电极电学性能
Keywords:
thin film transistor(TFT)inkjet printingcircular electrodeelectrical properties
分类号:
TB 34
文献标志码:
A
摘要:
近年来,随着高密度、低能耗的电子器件迅速发展,对薄膜晶体管(TFT)器件的电极结构设计提出了更高的要求.其中,圆形电极结构不仅可减少在TFT器件中所占版图面积,而且又能较好地解决传统不闭环结构电极中央与端部之间机械和电学行为不同的问题,成为了未来微型显示驱动领域的研究热点.此外,传统薄膜晶体管电极的制备需要通过掩膜版光刻来形成图案化的电极,这不仅导致步骤数量增加而且图案化电极性能直接受到刻蚀剂等废液的影响.而喷墨打印工艺具备独特的非接触式加工方式、受环境影响小和高效率等优点,可打印较为复杂的结构,受到TFT器件制备领域研究人员的广泛关注.本文结合上述两者的优点,采用喷墨打印的方式制备圆形电极,并研究了改变圆形电极沟道宽度对所制备TFT器件电学性能的影响.结果表明,适当减小圆形电极的沟道宽度可有效提升TFT器件性能,当同心圆型沟道宽度为50 μm时,所制备的TFT器件性能较好,开关比可达4.3×105,阈值电压为4 V.
Abstract:
In recent years,high density,low energy consumption of the rapid development of the electronic devices,higher requirements have been put forward for electrode structure design of thin film transistor(TFT)devices.The circular electrode structure because of its not only can reduce the occupied territory area in the thin film transistor,and can better solve the traditional closed loop structure of the central electrode and the end between mechanical and electrical behaviors of different problems,has become the future such as hot research topic in the field of micro display driver.In addition,the traditional preparation of thin film transistor electrode need through the mask lithography to form a pattern of electrodes,this not only leads to step increase in the number and pattern electrode performance is directly affected by the etching agent waste liquid.The ink-jet printing due to its unique way of non-contact processing,little affected by environment and high efficiency etc,and can print more complex structure,making more experimental research in preparation of thin film transistor inkjet printing electrode.In this paper,combining the advantage of the two,with the method of ink-jet printing preparation circular electrode,and studied the change of circular electrode by preparation of TFT device electrical performance of the channel width.The results show that the appropriate circle electrode channel width can effectively improve TFT device performance.TFT devices with concentric circular channel width of 50 microns have better performance, the switch ratio is 4.3×105 and the threshold voltage is 4 V.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期:2019-09-25
作者简介:陆 璐(1995~),女,浙江省金华市人,硕士研究生.

更新日期/Last Update: 2019-10-25